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Semiconductor Process and Device Performance Modelling

Semiconductor Process and Device Performance Modelling

Semiconductor Process and Device Performance Modelling

Volume 490:
Scott T. Dunham, Boston University
Jeffrey S. Nelson, Sandia National Laboratories, Albuquerque, New Mexico
October 1998
490
Out of stock in print form with no current plan to reprint
Hardback
9781558993952
AUD$52.68
exc GST
Hardback
Paperback

    The concept of a 'virtual semiconductor fab' requires a focused effort among engineering, physics, chemistry, materials, mathematical and computational sciences. Although widely used by the semiconductor industry, current technology computer-aided design (TCAD) struggles to keep pace with new generations of IC technology. The semiconductor industry needs improved, predictive physically-based modelling and simulation capabilities to decrease cost, improve efficiency, and provide TCAD tools to process developers before production begins. Without the use of more advanced next generation TCAD models, future IC technology development will slow as a result of expensive, time-consuming experimental validation of processes and device performance. This book brings together researchers from industry, universities and national laboratories to highlight advances in TCAD, and to identify critical areas for future emphasis. Both silicon and compound semiconductor process and device performance modelling are featured. Topics include: bulk process modelling; equipment modelling; topography modelling; and characterization and device modelling.

    Product details

    October 1998
    Hardback
    9781558993952
    273 pages
    228 × 152 mm
    0.568kg
    Out of stock in print form with no current plan to reprint
      Editors
    • Scott T. Dunham , Boston University
    • Jeffrey S. Nelson , Sandia National Laboratories, Albuquerque, New Mexico