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Fundamentals of Ultra-Thin-Body MOSFETs and FinFETs

Fundamentals of Ultra-Thin-Body MOSFETs and FinFETs

Fundamentals of Ultra-Thin-Body MOSFETs and FinFETs

Jerry G. Fossum, University of Florida
Vishal P. Trivedi, Freescale Semiconductor, Arizona
August 2013
Available
Hardback
9781107030411
AUD$95.41
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eBook

    Understand the theory, design and applications of the two principal candidates for the next mainstream semiconductor-industry device with this concise and clear guide to FD/UTB transistors.
    • Describes FD/SOI MOSFETs and 3-D FinFETs in detail
    • Covers short-channel effects, quantum-mechanical effects, applications of UTB devices to floating-body DRAM and conventional SRAM
    • Provides design criteria for nanoscale FinFET and nanoscale thin- and thick-BOX planar FD/SOI MOSFET to help reduce technology development time
    • Projects potential nanoscale UTB CMOS performances
    • Contains end-of-chapter exercises.
    For professional engineers in the CMOS IC field who need to know about optimal non-classical device design and integration, this is a must-have resource.

    • Presents multi-gate MOSFET theory and optimal device design, including FinFETs
    • Introduces a compact model for generic DG MOSFETS, UFDG, which is a useful aid to understanding UTB device fundamentals as well as device and circuit design
    • UFDG/Spice3 simulation results are used to clarify the discussions of the fundamentals and to give added physical insights on their effects

    Product details

    No date available
    Adobe eBook Reader
    9781107439610
    0 pages
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    129 b/w illus. 15 tables 54 exercises
    This ISBN is for an eBook version which is distributed on our behalf by a third party.

    Table of Contents

    • Preface
    • List of physical constants
    • List of symbols
    • 1. Introduction
    • 2. Unique features of UTB MOSFETs
    • 3. Planar fully depleted SOI MOSFETs
    • 4. FinFETs
    • Appendix: UFDG
    • References
    • Index.
      Authors
    • Jerry G. Fossum , University of Florida

      Jerry G. Fossum is Distinguished Professor Emeritus of Electrical and Computer Engineering at the University of Florida, Gainesville, and a Fellow of the IEEE. He won the IEEE/EDS J. J. Ebers Award in 2004 for 'outstanding contributions to the advancement of SOI CMOS devices and circuits through modeling'.

    • Vishal P. Trivedi , Freescale Semiconductor, Arizona

      Vishal P. Trivedi is a Member of the Technical Staff and a Distinguished Innovator at Freescale Semiconductor, Inc., and a Senior Member of the IEEE.