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Ferroelectric Thin Films X

Ferroelectric Thin Films X

Ferroelectric Thin Films X

Volume 688:
Stephen R. Gilbert, Agilent Technologies, California
Susan Trolier-McKinstry, Pennsylvania State University
Yoichi Miyasaka, NEC Corporation, Tsukuba, Japan
Stephen K. Streiffer, Argonne National Laboratory, Illinois
Dirk J. Wouters, IMEC, Belgium
May 2002
688
Hardback
9781558996243
Out of Print
Hardback
Paperback

    This book, the tenth in a highly successful series from the Materials Research Society, presents technical information on ferroelectric thin films from academia, government laboratories, and industry. Substantial progress in several areas of integrated ferroelectric and high-permittivity device technology are demonstrated. In particular, the latest developments in high-density FeRAM devices are reviewed, as are developments in the use of these films in piezoelectric, pyroelectric, tunable RF, integrated capacitor, and optical waveguide applications. Thin-film processing techniques used to deposit a variety of ferroelectric and electrode materials are also highlighted, and recent advances in the fundamental understanding of ferroelectricity and degradation phenomena in thin films are addressed. Topics include: processing of Pb-based ferroelectrics; processing of Bi-based ferroelectrics; ferroelectric nonvolatile memories - technology, fundamentals and integration; integration and electrodes; epitaxial ferroelectric films; domains and nanostructures; piezoelectrics and pyroelectrics; ferroelectric gates; thin films for RF applications and high-permittivity materials.

    Product details

    May 2002
    Hardback
    9781558996243
    444 pages
    229 × 152 × 25 mm
    0.76kg
    Unavailable - out of print
      Editors
    • Stephen R. Gilbert , Agilent Technologies, California
    • Susan Trolier-McKinstry , Pennsylvania State University
    • Yoichi Miyasaka , NEC Corporation, Tsukuba, Japan
    • Stephen K. Streiffer , Argonne National Laboratory, Illinois
    • Dirk J. Wouters , IMEC, Belgium