Materials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics — 2011
Materials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics — 2011
Volume 1335:
Mikhail R. Baklanov, IMEC
Geraud Dubois, IBM Almaden Research Center
Christian Dussarrat, Air Liquide
Terukazu Kokubo, National Institute of Advanced Industrial Science and Technology
Shinichi Ogawa, JSR Tsukuba Research Laboratories
Geraud Dubois, IBM Almaden Research Center
Christian Dussarrat, Air Liquide
Terukazu Kokubo, National Institute of Advanced Industrial Science and Technology
Shinichi Ogawa, JSR Tsukuba Research Laboratories
November 2011
1335
Unavailable - out of print
Hardback
9781605113128
Out of Print
Hardback
This volume includes selected papers based on the presentations given at Symposium O, 'Materials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics', held at the April 25−29, 2011 MRS Spring Meeting in San Francisco, California. The symposium included topics relating to low-k dielectrics, integration, reliability, metallization, packaging and emerging technologies.
Product details
November 2011Hardback
9781605113128
140 pages
236 × 156 × 14 mm
0.35kg
102 b/w illus. 5 tables
Unavailable - out of print
Table of Contents
- Part I. Low-k Materials:
- 1. Ultra low-k materials based on self-assembled organic polymers Marianna Pantouvaki
- 2. New designs of hydrophobic and mesostructured ultra low k materials with isolated mesopores Anthony Grunenwald
- 3. Evaluation of ultra-thin layer fabricated by wet-process as a pore-seal for porous low-k films Shoko Ono
- 4. Ozone treatment on nanoporous ultralow dielectric materials to optimize their mechanical and dielectrical properties Hee-Woo Rhee
- Part II. Integration:
- 5. Optimizing stressor film deposition sequence in polish rate order for best planarization John H. Zhang
- 6. Effect of chemical solutions and surface wettability on the stability of advanced porous low-k materials Quoc Toan Le
- 7. A less damaging patterning regime for a successful integration of ultra low-k materials in modern nanoelectronic devices Sven Zimmermann
- 8. Defects in low-ĸ insulators (ĸ=2.5–2.0): ESR analysis and charge injection Valeri Afanas'ev
- 9. Patterning organic fluorescent molecules with SAM patterns Nan Lu
- 10. Optical interconnect technologies based on silicon photonics Wim Bogaerts
- Part III. Metallization:
- 11. 32nm node highly reliable Cu/low-k integration technology with CuMn alloy seed Shaoning Yao
- 12. Amorphous Ta-N as a diffusion barrier for Cu metallization Neda Dalili
- 13. Comparison of TiN thin films grown on SiO2 by reactive dc magnetron sputtering and high power impulse magnetron sputtering Jon Gudmundsson
- 14. Specific contact resistance of ohmic contacts on n-type SiC membranes Patrick Leech
- 15. Development of electrochemical copper deposition screening methodologies for next generation additive selection Kevin Ryan
- Part IV. 3D Packaging:
- 16. Microbump impact on reliability and performance in through-silicon via stacks Aditya Karmarkar
- 17. Tailoring the crystallographic texture and electrical properties of inkjet-printed interconnects for use in microelectronics Romain Cauchois.
