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GaN and Related Alloys

GaN and Related Alloys

GaN and Related Alloys

Volume 537:
Stephen J. Pearton, University of Florida
Chihping Kuo, Hewlett-Packard Co., San Jose, California
Alan F. Wright, Sandia National Laboratories, New Mexico
Takeshi Uenoyama, Matsushita Electric Industrial Co. Ltd., Japan
September 1999
537
Out of stock in print form with no current plan to reprint
Hardback
9781558994430
£29.99
GBP
Hardback

    This book covers the full spectrum of activity in the GaN and related materials arena. These semiconductors are finding applications in full-color displays, high-density information storage, white lighting for outdoor or backlit displays, solar-blind UV detectors, high-power/high-temperature electronics, and covert undersea communications. Progress is been reported in the growth of thick layers on patterned substrates by various methods, leading to lower overall defect concentrations and improved current-voltage and reliability characteristics. The rapidly increasing market for blue/green LEDs is also noted by the entry of a number of new companies to the field. While these emitter technologies continue to be dominated by MOCVD material, there are exciting reports of UV detectors and HFET structures grown by MBE with device performance at least as good as by MOCVD. Topics include: GaN electronic and photonic devices; laser diodes and spectroscopy; electronic devices and processing; quantum dots and processing; novel growth, doping and processing and rare-earth doping and optical emission.

    Product details

    September 1999
    Hardback
    9781558994430
    1024 pages
    236 × 165 × 56 mm
    1.56kg
    Out of stock in print form with no current plan to reprint
      Author
    • Alan F. Wright , Sandia National Laboratories, New Mexico
    • Editors
    • Stephen J. Pearton , University of Florida
    • Chihping Kuo , Hewlett-Packard Co., San Jose, California
    • Takeshi Uenoyama , Matsushita Electric Industrial Co. Ltd., Japan