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Materials, Technology and Reliability for Advanced Interconnects and Low-K Dielectrics — 2004

Materials, Technology and Reliability for Advanced Interconnects and Low-K Dielectrics — 2004

Materials, Technology and Reliability for Advanced Interconnects and Low-K Dielectrics — 2004

R. J. Carter, LSI Logic Corporation, Oregon, USA
C. S. Hau-Riege, Advanced Micro Devices Inc, California
G. m. Kloster, Intel Corporation, Oregon, USA
T. -M. Lu, Rensselaer Polytechnic Institute, New York
S. E. Schulz, TU Chemnitz, Germany
September 2004
Hardback
9781558997622
$36.99
USD
Hardback
USD
Paperback

    The scaling of device dimensions with a simultaneous increase in functional density has imposed tremendous challenges for materials, technology, integration and reliability of interconnects. To meet requirements of the ITRS roadmap, new materials are being introduced at a faster pace in all functions of multilevel interconnects. The issues addressed in this book cannot be dispelled as simply selecting a low-k material and integrating it into a copper damascene process. The intricacies of the back end for sub-100nm technology include novel processing of low-k materials, employing pore-sealing techniques and capping layers, introducing advanced dielectric and diffusion barriers, and developing novel integration schemes. This is in addition to concerns of performance, yield, and reliability appropriate to nanoscaled interconnects. Although many challenges continue to impede progress along the ITRS roadmap, the contributions in this book confront them head-on. It provides a scientific understanding of the issues and stimulate new approaches to advanced multilevel interconnects.

    Product details

    September 2004
    Hardback
    9781558997622
    402 pages
    228 × 152 mm
    0.677kg
    Out of stock in print form with no current plan to reprint
      Editors
    • R. J. Carter , LSI Logic Corporation, Oregon, USA
    • C. S. Hau-Riege , Advanced Micro Devices Inc, California
    • G. m. Kloster , Intel Corporation, Oregon, USA
    • T. -M. Lu , Rensselaer Polytechnic Institute, New York
    • S. E. Schulz , TU Chemnitz, Germany