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Semiconductor Defect Engineering

Semiconductor Defect Engineering

Semiconductor Defect Engineering

Materials, Synthetic Structures and Devices
Volume 864:
S. Ashok, Pennsylvania State University
J. Chevallier, CNRS, Meudon
B. L. Sopori, National Renewable Energy Laboratory, Golden, Colorado
M. Tabe, Shizuoka University, Japan
P. Kiesel, Palo Alto Research Center, California
June 2014
864
Paperback
9781107408975
Out of Print
Paperback
Hardback

    This book, first published in 2005, explores the deliberate introduction and manipulation of defects and impurities for the purpose of engineering desired properties in semiconductor materials and devices. The presentations are grouped around the distinct topics of materials, processing and devices. The papers on grown-in defects in bulk crystals deal with overviews of intrinsic and impurity-related defects and their influence on electrical, optical and mechanical properties, as well as the use of impurities to arrest certain types of defects during growth and defects to control growth. Most of the papers deal with dopant and defect issues relevant to widegap semiconductors. The scope of defect and impurity engineering is far-ranging, as exemplified by phase and morphological stability of silicides, interface control and passivation, and application of ion implantation, plasma treatment and rapid thermal processing for creating/activating/suppressing trap levels. Papers in these areas are also found in the book.

    Product details

    June 2014
    Paperback
    9781107408975
    630 pages
    229 × 152 × 32 mm
    0.83kg
    Unavailable - out of print
      Editors
    • S. Ashok , Pennsylvania State University
    • J. Chevallier , CNRS, Meudon
    • B. L. Sopori , National Renewable Energy Laboratory, Golden, Colorado
    • M. Tabe , Shizuoka University, Japan
    • P. Kiesel , Palo Alto Research Center, California