Materials Reliability Issues in Microelectronics

Materials Reliability Issues in Microelectronics
Frederick G. Yost, Sandia National Laboratories, Albuquerque, New Mexico
Paul S. Ho, IBM T J Watson Research Center, New York
$39.99
USDWith the increased complexity of modern integrated circuits, it is important that reliability problems be attacked properly with the appropriate tools. This volume recognizes that almost all reliability problems are materials problems, and helps to put 'reliabilty physics' on a firm scientific foundation. Topics include: electromigration; stress effects on reliability; stress and packaging; metallization; device, oxide and dielectric reliability; new investigative techniques; corrosion.
Product details
October 1991Hardback
9781558991194
382 pages
235 × 155 × 25 mm
0.7kg
Out of stock in print form with no current plan to reprint
Often bought together
Materials Reliability in Microelectronics II
: Paperback
Materials Reliability in Microelectronics III
: Paperback
Advanced Metallizations in Microelectronics
: Paperback
Often bought together

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- James R. Lloyd , Digital Equipment Corporation, Hudson, Massachusetts
- Frederick G. Yost , Sandia National Laboratories, Albuquerque, New Mexico
- Paul S. Ho , IBM T J Watson Research Center, New York
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