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Oxide Nanoelectronics

Oxide Nanoelectronics

Oxide Nanoelectronics

Volume 1292:
Harold Hwang, Stanford University, California
Jeremy Levy, University of Pittsburgh
Peter Makysymovych, Oak Ridge National Laboratory
Gilberto Medeiros-Ribeiro, Hewlett-Packard Laboratories
Rainer Waser, Institut für Festkörperforschung, Forschungszentrum Jülich
No date available
1292
Paperback
9781107406841
Paperback

    Symposium K, 'Oxide Nanoelectronics', was held November 29–December 3 at the 2010 MRS Fall Meeting in Boston, Massachusetts. The field of oxide nanoelectronics has grown tremendously in the last decade. Many striking empirical observations in a variety of oxide materials show great promise for ultrahigh-density storage, passive and active nanodevice creation, and functionality based on multiple properties (e.g., magnetic and ferroelectric). The prospect for band-device engineering in oxide heterostructures is comparable to what took place for III-V semiconductors roughly 30 years ago. The symposium that this volume is based on brought together researchers working in this new field to lay a materials-based foundation that can pave the way for major industrial use of these high-performance nanoelectronic systems. The presented topics included: the growth of new oxide materials and heterostructures using pulsed-laser deposition and molecular beam epitaxy; integration of oxides with silicon substrates; characterization of novel electronic and correlated-electron properties in oxide thin films and superlattices; nanoscale control of phase transitions and correlated properties; theory of oxide nanostructures; mixed ion-electronic conduction; magnetism; and oxide 2DEGs.

    Product details

    No date available
    Paperback
    9781107406841
    170 pages
    229 × 152 × 9 mm
    0.24kg
    127 b/w illus. 2 tables

    Table of Contents

    • Part I. Ferroelectric Oxides:
    • 1. Structural and ferroelectric properties of large c/a phase bismuth ferrite thin films prepared by ion beam sputtering Seiji Nakashima
    • 2. Dielectric properties of BST/(Y2O3)x(ZrO2)1-x/BST trilayer films Santosh Sahoo
    • 3. Coupling of defect fields to domains and phase transition characteristics of ferroelectric thin films with charged defects Ibrahim Misirlioglu
    • 4. Polarization dependence and relaxation of the current in polycrystalline ferroelectric Pb(ZrTi)O3 film Liubov Delimova
    • 5. Template-assisted fabrication of double-shelled nanotubes composed of inner shell Pb(Zr0.52Ti0.48)O3 and outer shell TiO2 by sol-gel process with spin-coating technique Sang Don Bu
    • 6. Magnetization effects in bulk YFeO3 and their dependency on electric field strength and temperature as a basis for thin film investigation of multiferroic technology Adam Hinckley
    • Part II. Electron Transport through Oxide Junctions:
    • 7. Electronic states and magnetic coupling in Fe/Fe3O4 junctions Junichiro Inoue
    • 8. Tunneling currents in nanoscale high-K MOS structures Andres Vercik
    • 9. Fabrication of semi-transparent resistive random access memory and its characteristics of nonvolatile resistive switching Jung Won Seo
    • Part III. Vanadium Dioxide:
    • 10. Epitaxial growth of V2O3 on Al2O3 by reactive MBE Leander Dillemans
    • 11. Lattice-symmetry-driven phase competition in vanadium dioxide Alexander Tselev
    • 12. Twin-domain epitaxial growth and metal-insulator transition of VO2 thin film on c-plane sapphire Zhaoyang Fan
    • Part IV. Binary Oxides:
    • 13. Structural, optical and magnetic properties of Co-doped ZnO nanopowders Segundo Jáuregui Rosas
    • 14. Preparation of the CrO2 thin films using a Cr8O21 precursor Yuji Muraoka
    • 15. Dispersed nanoelectrodes for high performance gas sensors Antonio Tricoli
    • 16. Template-free, low temperature synthesis of binary and ternary metal oxide nanostructures Sanjaya Brahma
    • 17. In-situ solution processed room temperature ferromagnetic MgO thin films printed by inkjet technique Yan Wu
    • 18. Effects of argon to oxygen ratio and post annealing on R.F. sputtered SnO2 thin film for ethylene gas detection Dong-Joo Kim
    • 19. The effect of oxygen partial pressure during deposition in the magnetic properties of ZnO thin film Anis Biswas
    • Part V. Growth of Ternary Oxides:
    • 20. Growth of CaFeOX/LaFeO3 superlattice on SrTiO3(100) substrates Nobuyuki Iwata
    • 21. Preparation and characterization of the single-layered cobaltate La2-xCaxCoO4 Dirk Fuchs
    • 22. Crystalline orientation of PbTiO3 nanorods grown by MOCVD using ZnO nanorods as a template Hironori Fujisawa
    • 23. PEG-assisted hydrothermal synthesis and photocatalytic activity of Bi2Fe4O9 crystallites Dengrong Cai
    • 24. Noncontact electrical diagnostics of barium strontium titanate (BST) thin films Andrew Hoff.
      Contributors
    • Seiji Nakashima, Santosh Sahoo, Ibrahim Misirlioglu, Liubov Delimova, Sang Don Bu, Adam Hinckley, Junichiro Inoue, Andres Vercik, Jung Won Seo, Leander Dillemans, Alexander Tselev, Zhaoyang Fan, Segundo Jáuregui Rosas, Yuji Muraoka, Antonio Tricoli, Sanjaya Brahma, Yan Wu, Dong-Joo Kim, Anis Biswas, Nobuyuki Iwata, Dirk Fuchs, Hironori Fujisawa, Dengrong Cai, Andrew Hoff

    • Editors
    • Harold Hwang , Stanford University, California
    • Jeremy Levy , University of Pittsburgh
    • Peter Makysymovych , Oak Ridge National Laboratory
    • Gilberto Medeiros-Ribeiro , Hewlett-Packard Laboratories
    • Rainer Waser , Institut für Festkörperforschung, Forschungszentrum Jülich