Fundamentals of Ultra-Thin-Body MOSFETs and FinFETs
Understand the theory, design and applications of the two principal candidates for the next mainstream semiconductor-industry device with this concise and clear guide to FD/UTB transistors.
• Describes FD/SOI MOSFETs and 3-D FinFETs in detail
• Covers short-channel effects, quantum-mechanical effects, applications of UTB devices to floating-body DRAM and conventional SRAM
• Provides design criteria for nanoscale FinFET and nanoscale thin- and thick-BOX planar FD/SOI MOSFET to help reduce technology development time
• Projects potential nanoscale UTB CMOS performances
• Contains end-of-chapter exercises.
For professional engineers in the CMOS IC field who need to know about optimal non-classical device design and integration, this is a must-have resource.
- Presents multi-gate MOSFET theory and optimal device design, including FinFETs
- Introduces a compact model for generic DG MOSFETS, UFDG, which is a useful aid to understanding UTB device fundamentals as well as device and circuit design
- UFDG/Spice3 simulation results are used to clarify the discussions of the fundamentals and to give added physical insights on their effects
Product details
No date availableAdobe eBook Reader
9781107439610
0 pages
0kg
129 b/w illus. 15 tables 54 exercises
Table of Contents
- Preface
- List of physical constants
- List of symbols
- 1. Introduction
- 2. Unique features of UTB MOSFETs
- 3. Planar fully depleted SOI MOSFETs
- 4. FinFETs
- Appendix: UFDG
- References
- Index.