Doping Engineering for Front-End Processing
Doping Engineering for Front-End Processing
Volume 1070:
B. J. Pawlak, NXP Semiconductors, Belgium
M. L. Pelaz, Universidad de Valladolid, Spain
M. Law, University of Florida
K. Surugo, Toshiba Corporation, Japan
M. L. Pelaz, Universidad de Valladolid, Spain
M. Law, University of Florida
K. Surugo, Toshiba Corporation, Japan
June 2014
1070
October 2008
Paperback
9781107408548
$31.99
USDPaperback
USD
Hardback
Materials scientists, silicon technologists and TCAD researchers come together in this book to share experimental results and physical models, discuss achievements and challenges, and identify key issues for future research in this field. The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures. Surface properties, coverage, bonding saturation and passivation, and annealing ambient are also discussed.
Product details
June 2014October 2008
Paperback
9781107408548
336 pages
229 × 152 × 18 mm
0.45kg
Available
Table of Contents
- Preface
- Part I. Ultra Shallow Junctions I
- Part II. Shallow Junction Contacting
- Part III. Poster Session
- Part IV. Ultra Shallow Junctions II
- Part V. Solid Phase Epitaxial Regrowth
- Part VI. Modeling and Simulation
- Author index
- Subject index.
