Nanoscale MOS Transistors
Nanoscale MOS Transistors
Pierpaolo Palestri, Università degli Studi di Udine, Italy
Luca Selmi, Università degli Studi di Udine, Italy
$154.00
USDWritten from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include:
• Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials
• All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework
• Predictive capabilities of device models, discussed with systematic comparisons to experimental results
- Provides the theoretical background and the physical insight needed to understand new and future developments
- Assumes minimal background in solid state physics and quantum mechanics
- Includes a wealth of applications, illustrations and examples to connect the methods described to all the latest topics in designing nanoscale MOSFETs
Reviews & endorsements
"In this comprehensive text, physicists and electrical engineers will find a thorough treatment of semiclassical carrier transport in the context of nanoscale MOSFETs. With only a very basic background in mathematics, physics, and electronic devices, the authors lead readers to a state-of-the-art understanding of the advanced transport physics and simulation methods used to describe modern transistors."
- Mark Lundstrom, Purdue University
"This is the most pedagogical and comprehensive book in the field of CMOS device physics I have ever seen."
- Thomas Skotnicki, STMicroelectronics
"This is a modern and rigorous treatment of transport in advanced CMOS devices. The detailed and complete description of the models and the simulation techniques makes the book fully self sufficient."
- Asen Asenov, University of Glasgow
Product details
March 2011Hardback
9780521516846
488 pages
254 × 182 × 25 mm
1.1kg
164 b/w illus. 30 tables
Available
Table of Contents
- 1. Introduction
- 2. Bulk semiconductors and the semi-classical model
- 3. Quantum confined inversion layers
- 4. Carrier scattering in silicon MOS transistors
- 5. The Boltzmann transport equation
- 6. The Monte Carlo method for the Boltzmann transport equation
- 7. Simulation of bulk and SOI silicon MOSFETs
- 8. MOS transistors with arbitrary crystal orientation
- 9. MOS transistors with strained silicon channels
- 10. MOS transistors with alternative materials
- Appendix A. Mathematical definitions and properties
- Appendix B. Integrals and transformations over a finite area A
- Appendix C. Calculation of the equi-energy lines with the k-p model
- Appendix D. Matrix elements beyond the envelope function approximation
- Appendix E. Charge density produced by a perturbation potential.
