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III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions

III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions

III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions

Volume 1202:
Shangjr Gwo, National Tsing Hua University, Taiwan
Joel W. Ager, III, Lawrence Berkeley National Laboratory, California
Fan Ren, University of Florida
Oliver Ambacher, Fraunhofer-Institut für Angewandte, Freburg, Germany
Leo Schowalter, Crystal IS, Inc. New York
June 2014
1202
May 2010
Available
Paperback
9781107408128
CAD$39.95
Paperback
CAD
Hardback

    There has been tremendous progress lately in the field of III-nitride (GaN, AlN, InN) semiconductors and their device applications. For example, the invention of III-nitride-based blue laser diodes was the key to a new high-density data storage technology, the Blue-ray disc. Concurrently, improvements in III-nitride-based solid state light sources have led to their use in an increasing number of illumination applications, moving steadily toward the goal of general lighting. This book focuses on three emerging areas for III-nitride applications - chemical and biological sensing, energy conversion and controlled light-matter interactions - and was based on the potential for these applications to improve our quality of life, as well as the superior material properties III-nitrides offer in terms of high chemical stability, excellent biocompatibility, efficient light absorption from the complete solar spectrum and strong light-matter coupling. Topics include: chemical and biological sensing; surface and interface properties; electronic devices; energy conversion; controlled light-matter interactions; light-emitting diodes and growth and processing.

    Product details

    June 2014
    May 2010
    Paperback
    9781107408128
    318 pages
    229 × 152 × 17 mm
    0.43kg
    Available

    Table of Contents

    • Part I. Chemical and Biological Sensing
    • Part II. Surface and Interface Properties
    • Part III. Electronic Devices
    • Part IV. Energy Conversion
    • Part V. Controlled Light-matter Interactions
    • Part VI. Light Emitting Diodes
    • Part VII. Growth and Processing
    • Author index
    • Subject index.
      Editors
    • Shangjr Gwo , National Tsing Hua University, Taiwan
    • Joel W. Ager, III , Lawrence Berkeley National Laboratory, California
    • Fan Ren , University of Florida
    • Oliver Ambacher , Fraunhofer-Institut für Angewandte, Freburg, Germany
    • Leo Schowalter , Crystal IS, Inc. New York