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Materials Science of Novel Oxide-Based Electronics

Materials Science of Novel Oxide-Based Electronics

Materials Science of Novel Oxide-Based Electronics

Volume 623:
David S. Ginley, National Renewable Energy Laboratory, Golden, Colorado
John D. Perkins, National Renewable Energy Laboratory, Golden, Colorado
Hiroshi Kawazoe, Tokyo Institute of Technology
Dennis M. Newns, IBM T J Watson Research Center, New York
Andrey B. Kozyrev, Electrotechnical University, Russia
No date available
623
Paperback
9781107413047
Paperback

    Oxide materials are emerging as potential candidates for a variety of existing and new optoelectronic and microwave applications. Critical to enabling this development is the need to have high-quality materials and to be able to construct viable heterostructures. The existence of improved metal oxide films has enabled a deeper understanding of both the oxides' intrinsic properties and their potential application in real world electronics. Because of their special properties or combinations thereof, oxide films are leading to new classes of devices as well as potentially replacing common semiconductor devices. This book focuses on the materials growth, characterization, processing, and application of oxide films employed as the active elements in devices. A new understanding of basic materials properties is currently being combined with the development of novel heterostructures to lead to whole new classes of devices potentially affecting everything from energy conversion to computer memory. Topics include: applications; new ideas and magnetism; ferroelectrics and related materials; transparent conductors; and film deposition methods.

    Product details

    No date available
    Paperback
    9781107413047
    454 pages
    229 × 152 × 23 mm
    0.6kg
      Editors
    • David S. Ginley , National Renewable Energy Laboratory, Golden, Colorado
    • John D. Perkins , National Renewable Energy Laboratory, Golden, Colorado
    • Hiroshi Kawazoe , Tokyo Institute of Technology
    • Dennis M. Newns , IBM T J Watson Research Center, New York
    • Andrey B. Kozyrev , Electrotechnical University, Russia