Rare-Earth Doping of Advanced Materials for Photonic Applications — 2011
Rare-Earth Doping of Advanced Materials for Photonic Applications — 2011
Yasufumi Fujiwara, University of Osaka, Japan
Tom Gregorkiewicz, Universiteit van Amsterdam
Wojciech M. Jadwisienczak, Ohio University
$100.00
USDSymposium V, 'Rare-Earth Doping of Advanced Materials for Photonic Applications', Spring Meeting, Materials Research Society, San Francisco, April 25−29, 2011. It brought together researchers from a number of fields that traditionally do not interact closely with each other and provided the semiconductor, phosphors and device communities with a unique opportunity to discuss fundamental topics of common interest that underlie the emission in rare-earth-doped materials. Such a mix of different research topics, silicon photonics, phosphors, oxides and wide band gap materials including III-nitride semiconductors, to name a few, greatly promotes a healthy and vigorous exchange of ideas. The goal of this symposium was to highlight the status of light emission at infrared and visible wavelengths from rare-earth-doped phosphors as well as semiconductors. Issues of rare-earth-materials applications for green technologies, sustainability and opportunities for development of multifunctional devices utilizing magnetic, electric and pressure stimuli were also addressed.
Product details
November 2011Hardback
9781605113197
132 pages
229 × 152 × 9 mm
0.35kg
75 b/w illus. 3 tables
Available
Table of Contents
- Part I. ZnO, GaN, Phosphors:
- 1. Rare earth materials challenge to national defense: material scientist's perspective Shiva Hullavarad
- 2. Electroluminescence properties of Eu-doped GaN-based light-emitting diodes grown by organometallic vapor phase epitaxy Atsushi Nishikawa
- 3. Photoluminescence X-ray excitation spectra in Eu-doped GaN grown by organometallic vapor phase epitaxy Shuichi Emura
- 4. Nature and excitation mechanism of the emission-dominating minority Eu-center in GaN grown by organometallic vapor-phase epitaxy Jonathan Poplawsky
- 5. Damage formation in GaN under medium energy range implantation of rare earth ions: a combined TEM, XRD and RBS/C investigation Bertrand Lacroix
- Part II. Insulating Materials: Lasers and Phosphors:
- 6. Upconversion in rare-earth ion-doped NaYF4 crystals and nanocolloids Darayas Patel
- 7. Preparation of luminescent inorganic core/shell-structured nanoparticles Moritz Milde
- 8. Vacuum deposited erbium-doped NIR luminescent organic thin films for 1.5 µm optical amplication applications Christophe Galindo
- 9. Multicolor luminescence from Ca3Y2(SiO4)3:Eu2+,Eu3+ material Anna Dobrowolska
- 10. Efficient near-infrared luminescence and energy transfer in Nd-Bi co-doped zeolites Zhenhua Bai
- 11. Red-emitting Ca(1-x)SrxS:Eu2+ phosphors as light converters for plant-growth applications Miroslaw Batentschuk
- 12. Photostimulable fluorescent nanoparticles for biological imaging Andres Osvet
- 13. Imaging upconversion from NaYF4:Er:Yb nanoparticles on Au and Ag nanostructured substrates Steve Smith
- Part III. Rare Earth Ions in Group III - Nitrides:
- 14. Ultraviolet light emitting devices using AlGdN Takashi Kita
- 15. Theoretical investigation of Er-O co-doping in hexagonal GaN Simone Sanna
- 16. Photoluminescence of Eu-doped GaN Kevin O'Donnell
- 17. Site selective magneto-optical studies of Eu ions in gallium nitride Nathaniel Woodward.
