Doping in III-V Semiconductors
Doping in III-V Semiconductors
Doping of III-V semiconductor compounds is the basis of virtually all semiconductor heterostructures and all optoelectronic devices. This is the first book to provide a comprehensive and thorough treatment of the subject, examining both theoretical and experimental aspects, and including important material on delta-doping. The author is involved in research at one of the world's foremost microelectronics laboratories, and while assessing the current state of the art, he also provides valuable introductory material for those beginning studies or research in this field.
- The author is from AT&T, one of the most influential semiconductor physics laboratories in the world
- The first book to describe thoroughly the many facets of doping in compound semiconductors
- Could be used as a text for certain graduate courses in electrical engineering and materials science
Reviews & endorsements
"Fred Schubert has written a book that very nicely fills two roles: It serves as a reference volume for those of us who use III-V materials, and it provides enlightening explanations of interesting and important problems in semi-conductor physics....His lucid explanations of some of the important physics of doped semiconductors is a major strength." David L. Miller, Physics Today
Product details
October 1993Hardback
9780521419192
632 pages
234 × 157 × 36 mm
1.016kg
240 b/w illus. 1 table
Available
Table of Contents
- 1. Shallow impurities
- 2. Phenomenology of deep levels
- 3. Semiconductor statistics
- 4. Growth technologies
- 5. Doping with elemental sources
- 6. Gaseous doping sources
- 7. Impurity characteristics
- 8. Redistribution of impurities
- 9. Deep centers
- 10. Doping in heterostructures, quantum wells, and superlattices
- 11. Delta doping
- 12. Characterization technique.
