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Nanostructured Semiconductors and Nanotechnology

Nanostructured Semiconductors and Nanotechnology

Nanostructured Semiconductors and Nanotechnology

Volume 1551:
Isabelle Berbezier, Université d'Aix-Marseille
Jean-Noel Aqua, Université Paris 6 – INSP
Jerrold Floro, University of Virginia
Andrej Kuznetsov, University of Oslo
November 2014
1551
Available
Hardback
9781605115283
£65.99
GBP
Hardback

    Symposium R, 'Nanostructured Semiconductors and Nanotechnology' was held April 1–5, 2013, at the 2013 MRS spring meeting in San Francisco, California. The aim of the symposium was to review present and future trends of research on nanostructured semiconductors from fundamental issues of synthesis (epitaxy, nanofunctionalization, and self-assembly) to emerging applications in advanced devices (nanoelectronics, photovoltaics, nanophotonics, and so on).

    Product details

    November 2014
    Hardback
    9781605115283
    186 pages
    235 × 158 × 15 mm
    0.4kg
    108 b/w illus. 10 tables
    Available

    Table of Contents

    • Part I. Nanostructuring Semiconductors:
    • 1. Role of As in the anisotropic positioning of self-assembled InAs quantum dots
    • 2. Synthesis and compositional control of size monodisperse SixGe1-x nanocrystals for optoelectronic applications
    • 3. Self-energy models for scattering in semiconductor nanoscale devices: causality considerations and the spectral sum rule
    • 4. SiC-based 1D nanostructures
    • 5. Scanning photocurrent microscopy of as-grown silicon nanowire metallurgical junctions
    • 6. Impact of the aggressive scaling on the performance of FinFETs: the role of a single dopant in the channel
    • 7. High energy density, high operating frequency and energy efficient on-chip inductors based on coiled carbon nanotubes (CCNTs)
    • 8. Structural evolution of nickel doped zinc oxide nanostructures
    • 9. Emission color tuning of Ge nanoparticles in the ranging from UV through visible to near-IR
    • 10. Nanostructured amorphous silicon on metal electrodes: electrical and optical properties
    • 11. Si nanowire-gold nanoparticles heterostructures for surface enhanced Raman spectroscopy
    • Part II. Group IV Nanostructure and Self Assembly:
    • 12. Nano-scale chemistry of complex self-assembled nanostructures in epitaxial SiGe films
    • 13. Ab initio simulation of 1D pattern formation of adsorbates on the Ge(100)-2 × 1 surface
    • 14. Instability formation in epitaxial SiGe lines under hydrogen annealing
    • Part III. Synthesis, Characterization and Transport Properties:
    • 15. Palladium catalyzed defect-free <110> zinc-blende structured InAs nanowires
    • 16. Needles and haystacks: influence of catalytic metal nanoparticles on structural and vibrational properties and morphology of silicon nanowires synthesized by metal-assisted chemical etching
    • 17. Improving yields in bridging silicon nanowires with rational control of the bridge characteristics
    • 18. Effect of crystal size on the structural and functional properties of water-stable monodisperse ZnO nanoparticles synthesized via a polyol-route
    • 19. Simulation of DC characteristics of nano-scale hydrogen-terminated diamond MISFETs
    • 20. Electron localization, tunneling and energy spectrum for systems of double quantum dots
    • Part IV. Quantum Dot Based Photovoltaic Devices:
    • 21. Investigation of quantum dot solar cell device performance
    • 22. Enhanced photocurrent due to interband transitions from InAs quantum dots embedded in InGaAs quantum well solar cells
    • 23. Modeling and fabrication of quantum dot channel field effect transistors incorporating quantum dot gate
    • 24. Enhanced response in InAs quantum dots in an InGaAs quantum well solar cells by anti-reflection coatings.
      Contributors
    • Fabrizio Arciprete, Ernesto Placidi, Rita Magri, Massimo Fanfoni, Adalberto Balzarotti, Fulvia Patella, Keith Linehan, Darragh Carolan, Daithi ó Sé, Hugh Doyle, John R. Barker, Antonio Martinez, Maelig Ollivier, Laurence Latu-Romain, Mickaël Martin, Arnaud Mantoux, Edwige Bano, Mark Triplett, M. Saif Islam, Dong Yu, Manuel Aldegunde, H. Faraby, P. R. Bandaru, Navendu Goswami, Anshuman Sahai, Naoto Shirahata, George A. Hernandez, Daniel Martinez, Stephen Patenaude, Michael C. Hamilton, Yuan Li, John C. Dykes, Nitin Chopra, Prabhu Balasubramanian, Jerrold A. Floro, Jennifer L. Gray, Robert Hull, Bonggeun Shong, Stacey F. Bent, Birgit Seiss, Georges Brémond, Didier Dutartre, Hongyi Xu, Qiang Gao, H. Hoe Tan, Chennupati Jagadish, Jin Zou, M. K. Dawood, S. Tripathy, S. B. Dolmanan, T. H. Ng, T. Hao, J. Lam, Jin Yong Oh, Yesusa Collantes, Oscar Perales-Perez, Xi Zhou, Frances Williams, Sacharia Albin, Igor Filikhin, Sergei Matinyan, Branislav Vlahovic, Neil S. Beattie, Guillaume Zoppi, Ian Farrer, Patrick See, Robert W. Miles, David A. Ritchie, R. Vasan, Y. F. M. Makableh, J. C. Sarker, M. O. Manasreh, Jun Kondo, Murali Lingalugari, Pik-Yiu Chan, Evan Heller, Faquir Jain, Y. F. Makableh, S. Lee, M. A. Khan

    • Editors
    • Isabelle Berbezier , Université d'Aix-Marseille
    • Jean-Noel Aqua , Université Paris 6 – INSP
    • Jerrold Floro , University of Virginia
    • Andrej Kuznetsov , University of Oslo