Materials and Technology for Nonvolatile Memories
Materials and Technology for Nonvolatile Memories
Yoshihisa Fujisaki, Hitachi Ltd.
Guohan Hu, IBM T J Watson Research Center, New York
Eisuke Tokumitsu, JAIST
£89.99
GBPSymposium M, 'Materials and Technology for Nonvolatile Memories', was held November 30–December 5 at the 2014 MRS Fall Meeting in Boston, Massachusetts, which was a follow up of previous symposia on nonvolatile memories. Main research areas featured in Symposium M were advanced Flash memories, organic memories, resistive switching memories (ReRAM), magnetoresistive random access memories (MRAM), ferroelectric random access memories (FeRAM), phase-change memories, as well as emerging materials and technologies for nonvolatile memories. In addition, a highly successful one-day tutorial session, 'Emerging Materials and Devices for Nonvolatile Memories', was conducted and included tutorials on ReRAM, polymer/organic materials, MRAM, and Flash memories. This symposium proceedings volume represents the recent advances and related material issues on various kinds of nonvolatile memory technologies. The papers in this volume are categorized according to each type of memory technology and are not in the order of the symposium presentations.
Product details
January 2016Hardback
9781605117065
152 pages
235 × 156 × 13 mm
0.35kg
95 b/w illus. 2 tables
Temporarily unavailable - available from April 2025
Table of Contents
- Part I. Advanced Flash Memories:
- 1. Mixed-ionic-electronic-conduction (MIEC)-based access devices for 3D multilayer crosspoint memory
- 2. MANOS erase performance dependence on nitrogen annealing conditions
- Part II. Resistive Switching Memories (ReRAM):
- 3. Unipolar resistive switching behavior of high-k ternary rare-earth oxide LaHoO3 thin films for non-volatile memory applications
- 4. Influence of graphene interlayers on electrode-electrolyte interfaces in resistive random accesses memory cells
- 5. Nanosecond fast switching processes observed in gapless-type, Ta2O5–based atomic switches
- 6. XRD analysis of TRAM composed from [Sb2Te3/GeTe] superlattice film and its switching characteristics
- 7. Effect of morphological change on unipolar and bipolar switching characteristics in Pr0.7Ca0.3MnO3 based RRAM
- 8. Experimental and theoretical investigation of minimization of forming-induced variability in resistive memory devices
- 9. Material and device parameters influencing multi-level resistive switching of room temperature grown titanium oxide layers
- 10. A comprehensive study of effect of composition on resistive switching of HfxAl1-xOy based RRAM devices by combinatorial sputtering
- Part III. Magnetoresistive Random Access Memories (MRAM):
- 11. Perpendicular magnetic anisotropy on W-based spin-orbit torque CoFeB | MgO MRAM stacks
- 12. Strain induced super-paramagnetism in Cr2O3 in the ultra thin film limit
- Part IV. Ferroelectric Random Access Memories (FeRAM):
- 13. Giant self-polarization in FeRAM element based on sol-gel PZT films
- 14. The effect of H2 distribution in (Pb,La)(Zr,Ti)O3 capacitors with conductive oxide electrodes on the degradation of ferroelectric properties
- 15. Chemical fluid deposition of Hf-Zr-O-based thin films using supercritical carbon dioxide fluid
- 16. Ferroelectricity in strategically synthesized Pb-free LiNbO3-type ZnSnO3 nanostructure arrayed thick films
- 17. Measurements of polarization switching in LiNbO3-type ZnSnO3/ZnO nanocomposite thin films
- Part V. Polymer Memories and Emerging Materials:
- 18. Photo-controllable resistive memory based on polymer materials
- 19. Determining the efficiency of fast ultrahigh-density writing of low-conductivity patterns on semiconducting polymers
- 20. Photoelectron spectroscopy characterization and computational modeling of gadolinium nitride thin films synthesized by chemical vapor deposition
- 21. Chemo-ionic-conformational memory from reactive dense gels: a way to explore new multivalent memories and brain memory.
