Materials and Physics for Nonvolatile Memories
Materials and Physics for Nonvolatile Memories
Volume 1160:
Yoshihisa Fujisaki, Hitachi Ltd, Tokyo
Rainer Waser, Rheinisch-Westfälische Technische Hochschule, Aachen, Germany
Tingkai Li, Sharp Laboratories of America, Washington
Caroline Bonafos, CEMES/CNRS France
Rainer Waser, Rheinisch-Westfälische Technische Hochschule, Aachen, Germany
Tingkai Li, Sharp Laboratories of America, Washington
Caroline Bonafos, CEMES/CNRS France
June 2014
1160
November 2009
Available
Paperback
9781107408296
NZD$53.95
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Hardback
This third book in a series on nonvolatile memories builds on fundamental materials properties, materials integration, demonstration, and industrial devices gathered in those previous. A strong and increasing interest in nonvolatile memories, both domestic and international, indicates the worldwide importance of these materials and memory devices. The book features research on advanced flash memories, including nanoparticle floating gate FETs, MRAM, FeRAM, ReRAM and phase change RAMs, as well as memories using polymer materials. Papers from a joint session with Symposium FF, Novel Materials and Devices for Spintronics, are also included.
Product details
June 2014November 2009
Paperback
9781107408296
216 pages
229 × 152 × 12 mm
0.3kg
Available
Table of Contents
- Part I. Advanced Flash I
- Part II. Charge Trap Memory I
- Part III. Magnetic Resistive RAM
- Part IV. Poster Session: Advanced Flash II
- Part V. Poster Session: Charge Trap II and MRAM
- Part VI. Ferroelectric Memory
- Part VII. Resistive Switching RAM I
- Part VIII. Resistive Switching RAM II
- Part IX. Poster Session: Resistive Switching RAM III
- Part X. Poster Session: Phase Change RAM I
- Part XI. Phase Change RAM II
- Part XII. Phase Change RAM III
- Author index
- Subject index.
