Low Energy Ion Beam and Plasma Modification of Materials
Low Energy Ion Beam and Plasma Modification of Materials
Volume 223:
James M. E. Harper, IBM T J Watson Research Center, New York
Kiyoshi Miyake, Hitachi Research Laboratory, Hitachi Ltd., Ibaraki, Japan
John R. McNeil, University of New Mexico
Steven M. Gorbatkin, Oak Ridge National Laboratory, Oak Ridge, Tennessee
Kiyoshi Miyake, Hitachi Research Laboratory, Hitachi Ltd., Ibaraki, Japan
John R. McNeil, University of New Mexico
Steven M. Gorbatkin, Oak Ridge National Laboratory, Oak Ridge, Tennessee
June 2014
223
Unavailable - out of print
Paperback
9781107409897
Out of Print
Paperback
Hardback
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Product details
June 2014Paperback
9781107409897
418 pages
229 × 152 × 22 mm
0.56kg
Unavailable - out of print
Table of Contents
- Part I. Fundamentals of Ion-Material Interactions
- Part II. Microwave Ion Sources for Deposition and Etching
- part I. Fabrication processes and physical properties T. T. Chau, S. R. Mejia and K. C. Kao
- 11. Structural and interfacial characteristics of thin (<10 nm) SiO2 films grown by electron cyclotron resonance plasma oxidation on [100] si substrates Tai D. Nguyen, D. A. Carl, D. W. Hess, M. A. Lieberman and R. Gronsky
- 12. Cubic brown nitride prepared by an ECR plasma Y. Osaka, M. Okamoto and Y. Utsumi
- 13. The ECR-plasma deposition of silicon nitride on a tunnel oxide J. C. Barbour, H. J. Stein and C. A. Outten
- 14. ECR plasma etching technology for ULSIs Seiji Samukawa
- 15. The mechanisms of reactive ion etching of SiOx (x<2) with electron cyclotron resonance and Kaufman ion sources R. A. Kant, C. R. Eddy, Jr, and B. D. Sartwell
- 16. Shallow p+-n junction fabrication by plasma immersion ion implantation C. A. Pico, X. Y. Qian, E. Jones, M. A. Lieberman and N. W. Chang
- 17. Electron cyclotron resonance hydrogenation of poly-si thin film transistors on SiO2/Si substrates Gand Liu, Robert A. Ditizio, Stephen J. Fonash and Nang Tran
- 18. Electron cyclotron resonance hydrogen plasma induced defects in thermally grown and sputter depositied SiO2 W. L. Hallett, R. A. Ditizio and S. J. Fonash
- Part III. Processing of High Tc Thin Films and Interfaces
- Part III. Processing of High Tc Thin Films and Interfaces
- Part IV. Electronic Materials
- Part V. Electronic Materials
- Part VI. Ion Processing of Oxides, Nitrides, Polymers and Carbon
- Part VII. Ion Processing of Metals.
