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Group-IV Semiconductor Nanostructures

Group-IV Semiconductor Nanostructures

Group-IV Semiconductor Nanostructures

Volume 832:
Leonid Tsybeskov, New Jersey Institute of Technology
David J. Lockwood, National Research Council, Ontario
Christophe Delerue, Institute of Electronics, Lille, France
Masakazu Ichikawa, University of Tokyo
May 2005
832
Unavailable - out of print
Hardback
9781558997806
Out of Print
Hardback
Paperback

    Broad interest and steady progress in the area of Group-IV (Si:Ge:C) semiconductor nanostructures, including quantum dots, wires and wells, has produced a new class of functional materials and devices with characteristic dimensions less than 50nm. This volume brings together scientists from different disciplines to discuss fabrication and characterization techniques and optical and transport properties, as well as applications of Group-IV semiconductor nanostructures. Fields such as photonic systems, nanocrystal memories, light-emitting and THz devices, nanowire-based interconnections and transistors are addressed. Topics include: nanoscale silicon-based photonic systems; Si/SiGe/SiN heterostructures and devices; Si/SiGe quantum cascade laser for terahertz; three-dimensional Si/SiGe nanostructures; Si nanocrystals and porous Si- light-emitting properties; Si nanocrystals and porous Si - other properties; Group-IV semiconductor nanowires; and rare-earth-doped Group-IV semiconductor nanostructures.

    Product details

    May 2005
    Hardback
    9781558997806
    432 pages
    229 × 152 × 24 mm
    0.75kg
    Unavailable - out of print
      Editors
    • Leonid Tsybeskov , New Jersey Institute of Technology
    • David J. Lockwood , National Research Council, Ontario
    • Christophe Delerue , Institute of Electronics, Lille, France
    • Masakazu Ichikawa , University of Tokyo