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Film Silicon Science and Technology

Film Silicon Science and Technology

Film Silicon Science and Technology

Volume 1536:
Paul Stradins, National Renewable Energy Laboratory, Golden, Colorado
Akram Boukai, University of Michigan, Dearborn
Friedhelm Finger, Forschungszentrum Jülich GmbH
Takuya Matsui, National Institute of Advanced Industrial Science and Technology, Japan
Nicolas Wyrsch, École Polytechnique Fédérale de Lausanne
October 2013
1536
Available
Hardback
9781605115139
$69.00
USD
Hardback

    Symposium A, 'Film Silicon Science and Technology', was held April 1-5, 2013 at the 2013 MRS Spring Meeting in San Francisco, California.

    Product details

    October 2013
    Hardback
    9781605115139
    235 pages
    235 × 158 × 18 mm
    0.48kg
    150 b/w illus. 17 tables
    Available

    Table of Contents

    • Part I. Thin Film Silicon Solar Cells:
    • 1. Light management using periodic textures for enhancing photocurrent and conversion efficiency in thin-film silicon solar cells
    • 2. Panasonic's thin film silicon technologies for advanced photovoltaics
    • 3. Hydrogen-plasma etching of thin amorphous silicon layers for heterojunction interdigitated back-contact solar cells
    • 4. Employing lc-SiOX:H as n-type layer and back TCO replacement for high-efficiency a-Si:H/lc-Si:H tandem solar cells
    • 5. A vertical PN junction utilizing the impurity photovoltaic effect for the enhancement of ultra-thin film silicon solar cells
    • 6. Impact on thin film silicon properties and solar cell parameters of texture generated by laser annealing and chemical etching of ZnO:Al
    • 7. Novel intermediate reflector layer for optical and morphological tuning in the micromorph thin film tandem cell
    • 8. Development of nanocrystalline silicon based multi-junction solar cell technology for high volume manufacturing
    • 9. SnO2:F with very high haze value and transmittance in near infrared wavelength for use as front transparent conductive oxide films in thin-film silicon solar cells
    • Part II. Novel Silicon-Based Devices and Solar Cells:
    • 10. Amorphous silicon based betavoltaic devices
    • 11. SiC monolithically integrated wavelength selector with 4 channels
    • 12. Design of an optical transmission WDM link using plastic optical fibers
    • 13. Optoelectronic logic functions using optical bias controlled SiC multilayer devices
    • 14. Improvement of seed layer smoothness for epitaxial growth on porous silicon
    • Part III. Materials and Devices Characterization and Simulation:
    • 15. Local junction voltages and radiative ideality factors of a-Si:H solar modules determined by electroluminescence imaging
    • 16. The dependence of the crystalline volume fraction on the crystallite size for hydrogenated nanocrystalline silicon based solar cells
    • 17. Carrier lifetime measurements by photoconductance at low temperature on passivated crystalline silicon wafers
    • 18. Characterization of boron doped amorphous silicon films by multiple internal reflection infrared spectroscopy
    • 19. Emission spectra study of plasma enhanced chemical vapor deposition of intrinsic, n1, and p1 amorphous silicon thin films
    • 20. On the origin of the Urbach Rule and the Urbach Focus
    • 21. Ultrafast optical measurements of acoustic phonon attenuation in amorphous and nanocrystalline silicon
    • 22. Stress analysis of free-standing silicon oxide films using optical interference
    • 23. Effect of RF or VHF plasma on nanocrystalline silicon thin film structure: insight from OES and Langmuir Probe measurements
    • Part IV. Defects and Transport:
    • 24. Defect densities and carrier lifetimes in oxygen doped nanocrystalline Si
    • 25. Microstructure characterization of amorphous silicon films by effusion measurements of implanted helium
    • 26. Temperature dependence of 1/f noise and electrical conductivity measurements on p-type a-Si:H devices
    • 27. Study of surface passivation of CZ c-Si by PECVD a-Si:H films: a comparison between quasi-steady-state and transient photoconductance decay measurement
    • Part V. Nanostructured Silicon and Related Novel Materials:
    • 28. Charge transport in nanocrystalline germanium/hydrogenated amorphous silicon mixed-phase thin films
    • 29. Low temperature annealing of inkjet-printed silicon thin-films for photovoltaic and thermoelectric devices
    • 30. Shape evolution of faceted silicon nanocrystals upon thermal annealing in an oxide matrix
    • 31. Crystallization kinetics of plasma-produced amorphous silicon nanoparticles.
      Contributors
    • Hitoshi Sai, Takuya Matsui, Adrien Bidiville, Takashi Koida, Yuji Yoshida, Kimihiko Saito, Michio Kondo, Akira Terakawa, Hiroko Murayama, Yohko Naruse, Hirotaka Katayama, Takeyuki Sekimoto, Shigeo Yata, Mitsuhiro Matsumoto, Isao Yoshida, Mitsuoki Hishida, Youichiro Aya, Masahiro Iseki, Mikio Taguchi, Makoto Tanaka, Stefano N. Granata, Twan Bearda, Ivan Gordon, Jef Poortmans, Robert Mertens, S. W. Liang, C. H. Hsu, Y. W. Tseng, Y. P. Lin, C. C. Tsai, D. J. Paez, E. Huante-Ceron, A. P. Knights, Rym Boukhicha, Erik Johnson, D. Daineka, Antoine Michel, J. F. Lerat, Thierry Emeraud, Pere Roca i Cabarrocas, J.-B. Orhan, E. Vallat-Sauvain, M. Marmello, U. Kroll, J. Meier, E. Laux, D. Grange, S. Farine Brunner, H. Keppner, Xixiang Xu, Jinyan Zhang, Anhong Hu, Cao Yu, Minghao Qu, Changtao Peng, Xiaoning Ru, Jianqiang Wang, Furong Lin, Hongqing Shan, Yuanmin Li, Hui Yan, Masanobu Isshiki, Yasuko Ishikawa, Toru Ikeda, Takuji Oyama, Hidefumi Odaka, Porponth Sichanugrist, Makoto Konagai, N. Wyrsch, Y. Riesen, A. Franco, S. Dunand, H. Kind, S. Schneider, C. Ballif, M. Vieira, M. A. Vieira, V. Silva, P. Louro, J. Costa, P. Soares, H. Ferraz, P. Pinho, M. Barata, R. Martini, Radhakrishnan H. Sivaramakrishnan, V. Depauw, K. Van Nieuwenhuysen, I. Gordon, M. Gonzalez, J. Poortmans, T. M. H. Tran, B. E. Pieters, M. Schneemann, T. C. M. Müller, A. Gerber, T. Kirchartz, U. Rau, K. J. Schmidt, Y. Lin, M. Beaudoin, G. Xia, S. K. O'Leary, G. Yue, B. Yan, Guillaume Courtois, Bastien Bruneau, Igor P. Sobkowicz, Antoine Salomon, N. Ross, K. Shrestha, O. Chyan, C. L. Littler, V. C. Lopes, A. J. Syllaios, I-Syuan Lee, Yue Kuo, J. A. Guerra, L. Montañez, F. De Zela, A. Winnacker, R. Weingärtner, Joseph A. Andrade, Bryan E. Rachmilowitz, Brian C. Daly, Theodore B. Norris, J. Yang, S. Guha, Imen Rezadad, Javaneh Boroumand, Evan Smith, Pedro Figueiredo, Robert E. Peale, Lala Zhu, Ujjwal K. Das, Steven S. Hegedus, Robert W. Birkmire, Shantan Kajjam, Siva Konduri, Max Noack, G. Shamshimov, N. Ussembayev, Vikram Dalal, W. Beyer, W. Hilgers, D. Lennartz, F. C. Maier, N. H. Nickel, F. Pennartz, P. Prunici, E. Hanson, D. Whitfield, Omid Madani Ghahfarokhi, Karsten von Maydell, Carsten Agert, Kent E. Bodurtha, J. Kakalios, Etienne Drahi, Anshul Gupta, Sylvain Blayac, Sébastien Saunier, Laurent Lombez, Marie Jubault, Gilles Renou, Patrick Benaben, Zhenyu Yang, Alexander R. Dobbie, Jonathan G. C. Veinot, Thomas Lopez, Lorenzo Mangolini

    • Editors
    • Paul Stradins , National Renewable Energy Laboratory, Golden, Colorado
    • Akram Boukai , University of Michigan, Dearborn
    • Friedhelm Finger , Forschungszentrum Jülich GmbH
    • Takuya Matsui , National Institute of Advanced Industrial Science and Technology, Japan
    • Nicolas Wyrsch , École Polytechnique Fédérale de Lausanne