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Amorphous and Heterogeneous Silicon-Based Films – 2001

Amorphous and Heterogeneous Silicon-Based Films – 2001

Amorphous and Heterogeneous Silicon-Based Films – 2001

Volume 664:
Martin Stutzmann, Technische Universität München
James B. Boyce, Xerox Palo Alto Research Center, Stanford University, California
J. David Cohen, University of Oregon
Robert W. Collins, Pennsylvania State University
Jun-ichi Hanna, Tokyo Institute of Technology
June 2014
664
Paperback
9781107412248
Out of Print
Paperback
Hardback

    This book looks at the exchange of information on the physics and application of amorphous and microcrystalline silicon and presents exciting new developments. Significant progress has been made in the high- or even ultra-high-rate deposition of device-quality amorphous and microcrystalline silicon, in in-situ growth characterization techniques and in state-of-the-art computer modeling of deposition processes. These issues are especially important for the successful future commercialization of silicon thin-film devices. The latest results concerning silicon thin-film solar cells are highlighted. Active matrix arrays for displays or sensors continue to be the second major application of thin silicon films, and again much progress has been made in that area. Topics include: nucleation and growth; novel concepts; hot-wire CVD; high-rate deposition; growth of silicon and silicon-alloy thin films; crystallization; silicon-based alloys; structural properties of heterogeneous silicon films; dopants and impurities; amorphous and silicon solar cells; metastability; hydrogen and metastability; transport in µc-Si; thin-film transistors; hydrogenation and oxidation; defects and defect spectroscopy; structural and electronic properties of thin silicon films; heterojunctions; TFTs and sensors; amorphous-to-microcrystalline transition and structural relaxation and diffusion.

    Product details

    June 2014
    Paperback
    9781107412248
    1012 pages
    229 × 152 × 51 mm
    1.33kg
    Unavailable - out of print
      Editors
    • Martin Stutzmann , Technische Universität München
    • James B. Boyce , Xerox Palo Alto Research Center, Stanford University, California
    • J. David Cohen , University of Oregon
    • Robert W. Collins , Pennsylvania State University
    • Jun-ichi Hanna , Tokyo Institute of Technology