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Understanding Modern Transistors and Diodes

Understanding Modern Transistors and Diodes

Understanding Modern Transistors and Diodes

David L. Pulfrey, University of British Columbia, Vancouver
January 2010
Available
Hardback
9780521514606
£78.00
GBP
Hardback
USD
eBook

    Written in a concise, easy-to-read style, this text for senior undergraduate and graduate courses covers all key topics thoroughly. It is also a useful self-study guide for practising engineers who need a complete, up-to-date review of the subject.
    Key features:
    • Rigorous theoretical treatment combined with practical detail
    • A theoretical framework built up systematically from the Schrödinger Wave Equation and the Boltzmann Transport Equation
    • Covers MOSFETS, HBTs and HJFETS
    • Uses the PSP model for MOSFETS
    • Rigorous treatment of device capacitance
    • Describes the operation of modern, high-performance transistors and diodes
    • Evaluates the suitability of various transistor types and diodes for specific modern applications
    • Covers solar cells and LEDs and their potential impact on energy generation and reduction
    • Includes a chapter on nanotransistors to prepare students and professionals for the future
    • Provides results of detailed numerical simulations to compare with analytical solutions
    • End-of-chapter exercises
    • Online lecture slides for undergraduate and graduate courses

    • Written in a straightforward, easy-to-read style, combining rigorous theoretical treatment with practical detail
    • Evaluates the suitability of various transistor types and diodes for specific modern applications
    • Includes end-of-chapter exercises to test understanding, and sets of lecture slides for undergraduate and graduate courses are available online

    Product details

    January 2010
    Hardback
    9780521514606
    354 pages
    253 × 178 × 19 mm
    0.86kg
    191 b/w illus. 17 tables 141 exercises
    Available

    Table of Contents

    • Preface
    • 1. Introduction
    • 2. Energy band basics
    • 3. Electron and hole concentrations
    • 4. Thermal equilibrium
    • 5. Charge transport
    • 6. np-and Np-junction basics
    • 7. Solar cells
    • 8. Light-emitting diodes
    • 9. HBT basics
    • 10. MOSFET basics
    • 11. HJFET basics
    • 12. Transistor capacitances
    • 13. Transistors for high-speed logic
    • 14. Transistors for high frequencies
    • 15. Transistors for memories
    • 16. Transistors for high power
    • 17. Transistors for low noise
    • 18. Transistors for the future
    • Appendix A. Physical constants
    • Appendix B. Selected material properties
    • Appendix C. N-MOSFET parameters
    • Index.
    Resources for
    Type
    Lecture 12 (postgraduate)
    Size: 138.5 KB
    Type: application/vnd.ms-powerpoint
    Lecture 09 (undergraduate)
    Size: 1.65 MB
    Type: application/vnd.ms-powerpoint
    Lecture 11 (undergraduate)
    Size: 579 KB
    Type: application/vnd.ms-powerpoint
    Lecture 22 (undergraduate)
    Size: 4.12 MB
    Type: application/vnd.ms-powerpoint
    Lecture 03 (postgraduate)
    Size: 237 KB
    Type: application/vnd.ms-powerpoint
    Lecture 06 (postgraduate)
    Size: 1.71 MB
    Type: application/vnd.ms-powerpoint
    Lecture 11 (postgraduate)
    Size: 330.5 KB
    Type: application/vnd.ms-powerpoint
    Lecture 04 (undergraduate)
    Size: 487.5 KB
    Type: application/vnd.ms-powerpoint
    Lecture 06 (undergraduate)
    Size: 2.21 MB
    Type: application/vnd.ms-powerpoint
    Lecture 21 (undergraduate)
    Size: 1.06 MB
    Type: application/vnd.ms-powerpoint
    Lecture 22 (postgraduate)
    Size: 1.69 MB
    Type: application/vnd.ms-powerpoint
    Lecture 20 (postgraduate)
    Size: 963 KB
    Type: application/vnd.ms-powerpoint
      Author
    • David L. Pulfrey , University of British Columbia, Vancouver

      David L. Pulfrey is a Professor in the Department of Electrical and Computer Engineering at the University of British Columbia (UBC), Canada, where he has been since receiving his Ph.D. in 1968 from the University of Manchester, UK. He was the inaugural winner of UBC's Teaching Prize for Engineering (1990), and has received recognition for his research work on a wide range of semiconductor devices by being elected Fellow of the IEEE in 2000, and a Fellow of the Canadian Academy of Engineering in 2003.